Optimizing the Formation of Nickel Silicide
نویسندگان
چکیده
A review of the formation processes for nickel silicide is given to assess the limitations of using the silicide for sub-65 nanometer technologies. Various aspects attributed to the NiSi formation process are described and addressed by using a two-step process sequence for annealing. The focus of this study was to develop a process sequence with three principal steps to achieve low resistivity NiSi films utilizing a low temperature isothermal cavity based furnace. Process parameters for a low resistivity NiSi film were determined for a two-step annealing sequence to enhance device electrical characteristics. Through optimization of the initial anneal combined with a second higher temperature stabilization anneal, reduced defect levels are obtained resulting in reduced device leakage.
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